? 2010 ixys corporation, all rights reserved symbol test conditions maximum ratings v ces t j = 25c to 150c 1200 v v cgr t j = 25c to 150c, r ge = 1m 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c ( chip capability ) 125 a i c110 t c = 110c 55 a i lrms t c = 25c (lead rms limit) 120 a i cm t c = 25c, 1ms 400 a ssoa v ge = 15v, t vj = 125c, r g = 3 i cm = 110 a (rbsoa) clamped inductive load @ 0.8 ? v ces p c t c = 25c 460 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062 in.) from case for 10 260 c m d mounting torque ( ixgk ) 1.13/10 nm/lb.in. f c mounting force ( ixgx ) 20..120/4.5..27 n/lb. weight to-264 10 g plus247 6 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v ge(th) i c = 1ma, v ce = v ge 3.0 5.0 v i ces v ce = v ces , v ge = 0v 100 a note 1, t j = 125c 2.0 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = i c110 , v ge = 15v, note 2 1.85 2.3 v t j = 125c 1.90 ds100227(01/10) genx3 tm 1200v igbts w/ diode ixgk55n120a3h1 IXGX55N120A3H1 v ces = 1200v i c110 = 55a v ce(sat) 2.3v ultra-low-vsat pt igbts for up to 3khz switching features z optimized for low conduction losses z anti-parallel ultra fast diode advantages z high power density z low gate drive requirement applications z power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts z inrush current protection circuits g = gate e = emitter c = collector tab = collector plus247 tm (ixgx) g c e tab to-264 (ixgk) e g c e tab advance technical information
ixys reserves the right to change limits, test conditions, and dimensions. ixgk55n120a3h1 IXGX55N120A3H1 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c110 , v ce = 10v, note 2 30 45 s c ies 4340 pf c oes v ce = 25v, v ge = 0v, f = 1 mhz 300 pf c res 115 pf q g(on) 185 nc q ge i c = i c110 , v ge = 15v, v ce = 0.5 ? v ces 25 nc q gc 75 nc t d(on) 23 ns t ri 42 ns e on 5.1 mj t d(off) 365 ns t fi 282 ns e off 13.3 mj t d(on) 24 ns t ri 46 ns e on 9.5 mj t d(off) 618 ns t fi 635 ns e off 29.0 mj r thjc 0.27 c/w r thck 0.15 c/w inductive load, t j = 25c i c = i c110 , v ge = 15v v ce = 0.8 ? v ces , r g = 3 note 3 inductive load, t j = 125c i c = i c110 , v ge = 15v v ce = 0.8 ? v ces , r g = 3 note 3 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. notes: 1. part must be heatsunk for high-temp ices measurement. 2. pulse test, t 300 s, duty cycle, d 2%. 3. switching times & energy losses may increase for higher v ce (clamp), t j or r g . to-264 (ixgk) outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 plus 247 tm (ixgx) outline terminals: 1 = gate 2 = collector 3 = emitter terminals: 1 = gate 2 = collector 3 = emitter reverse diode (fred) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v f i f = 60a, v ge = 0v, note 2 1.85 2.5 v t j = 150c 1.90 v t rr 200 ns i rm 24.6 a r thjc 0.42 c/w i f = 60a, v ge = 0v, -di f /dt = 350a/ s, v r = 600v, t j = 100c
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